In this paper the 2-dimensional electron gas channel formed in n- AlGaN/GaN based High electron mobility transistor has been discussed with its 2DEG sheet electron density. Due to increase the attention toward the tera hertz(THz) applications the effects of plasma waves (which can exist in the gated two-dimensional electron gas with linear dispersion law) in the 2DEG channel has been summarized. The presence of plasma waves in 2DEG can cause the 2DEG channel behaves as cavity resonator with resonant frequency in the THz range. The fringingeffect which limits the resonant plasma frequency has been discussed in detail. The effect of fringing on the 2-dimensional gas channel sheet electron density and 2DEG cavity resonator frequency(THz) has been displayed.
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[Vishwanath Pratap Singh, Kaushik Mazumdar (2014); Study of 2-DEG Channel As A Cavity Resonator For THz Applications Int. J. of Adv. Res. 2 (2). 0] (ISSN 2320-5407). www.journalijar.com
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