01Jan 2017

Fabrication of Si-CNT Junction by Plasma Sputtering of Graphite Rods on Silicon Wafers

Abstract


In this work, fabrication of Si-C junction is done by plasma sputtering of the Carbon from graphite rods in Argon gas atmosphere without catalysts with thickness 25 – 82 nanometer . Study of images of the specimen by Scanning electron microscope shows that the carbon layer is in the form carbon nanotubes with diameters about 30 nanometer . More careful study of the carbon layer surface by high resolution optical microscope is done using both transmission and reflection methods , then the images are amplified more by computer software .The transmission images for carbon layer on the glass substrate shows two dimensional nanotubes structures . Images taken by reflection of white light from the carbon layer on Si-C junction, shows clearly zigzag nanotubes chairlity . The FTIR spectrum shows peaks characteristics of the carbon nanotubes , I-V measurements for gold electrodes shows semiconducting behavior as for thickness increasing.


Cite This Article as:


[Anwar M. Ezzat, Bassam M. Mustafa and Mohammad M. Uonis (2014); Fabrication of Si-CNT Junction by Plasma Sputtering of Graphite Rods on Silicon Wafers Int. J. of Adv. Res. 2 (2). 0] (ISSN 2320-5407). www.journalijar.com


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