SCALING CHALLENGES FOR ADVANCED TRANSISTOR DESIGN

M.Anil Kumar, Y.N.S.Sai Kiran, U.Jagadeesh, B.Balaram and M. Durga Prakash * . Department Of Ece., K L University, Greenfields, Vaddeswaram. ...................................................................................................................... Manuscript Info Abstract ......................... ........................................................................ Manuscript History

We all are living in the digital world where we are going to use many devices which are fabricated using the CMOS technology. Due to the constraint design of the circuits and long routing schemes we are going to make the chip work a lot harder and it results in high power consumption. In order to reduce the power consumption we prefer to use certain techniques like usage of nano-materials instead of conventional Poly-Silicon. In this technique we are interested to modify certain conditions which results in generation of a new kind of technology which results in low power consumed, high speed circuits and devices which make a new way in the world of electronics. To reduce the power consumption of transistor i.e., when compared with ordinary transistor we has to reduce the power consumption as well as the power dissipation [6] . So we propose the application of nanomaterials which have high conductivity as well as lowpower dissipation which can be employed in design of Transistors of various technologies ( like 200nm., 100nm., 50nm. etc.,).

…………………………………………………………………………………………………….... Introduction:-
CMOS Technology is facing a lot of problems over the last 30 years .In conventional MOSFET we have certain electrostatic limitations like source to drain tunneling, carrier mobility, static leakages etc., [1] [5] .As the size of nanomaterials is very small we can use a more number of transistors on a single chip so that size of the chip is reduced its additional features which can relatively reduce the complex fabrication into simple steps of fabrication so device and circuit developers are using this type of devices and also can use different types of materials used to make these type of materials at low cost [2] .
For an Ultra-small MOSFET we have to face several problems like high leakage current, high threshold voltage, high inter-connective capacitances, static leakages etc., all these problems can damage the MOSFET by reducing its performance [1] [5] .
In the VLSI industry it is critically necessary to have a device which has low power dissipation and has high performance along with long time durability. In order to achieve such characteristic features in a real time operation scenario it will be a hard tenacious task [11] . More in the present modern world the electronic device must have low response time along with low power consumption provided the cost of the device must be in a nominal range [7] . Using a conventional MOSFET device can no longer sustain such a modern day challenge. So if we use Nano-Materials we can meet the modern day challenge [3] [4] .

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In this paper we had replaced the Poly-Silicon material present on the Gate Terminal of the MOSFET device with different Nano-Materials like Si (Silicon Nano-Wires), ZnO ( Zinc Oxide Nano-Wires), CSi (Carbon-Silicon or Silicon Carbide Nano-Wires),Pani (Poly-Aniline Nano-wires), Pedot:pss (Poly Styrene Sulfonate Nano-Wires) [8] [9] .  (2) & (3).Basically first we will mention the X co-ordinates and Y co-ordinates in the software which will guide the software to lay the Silicon Wafer to those desired Co-ordinates. Later the Sio (Silicon Oxide) material is laid [10] .
Then it is etched to form gate, source and drain terminals. Later, respective impurities are doped accordingly. After doping process is completed, the respective Gate material is laid. Since we have used different gate materials like Pani, Pedot:Pss, Si, ZnO, CSilicon,Polysilicon etc., each material is laid one at a time. Now the Gate material is etched at source and drain terminals. Based on the required sizes i.e. based on required gate lengths it is etched once again [10] . Now over the Gate terminal once again the Silicon Dioxide (SiO 2 ) material is laid and is etched off at source and drain terminals. Now Aluminum metal is laid which forms the respective metal contacts for the so designed FET [10] .

Results and Discussions:-
After designing the FET the I ds Vs. V gs parameters for different gate materials of different gate lengths has been plotted as shown in figure (4).
The I ds Vs. V gs parameter for various materials of 200 nm is shown in figure (4.a). From the figure we can understand that ZnO (Zinc Oxide) material has low drain current .
Similarly for 100 nm technology shown in figure (4.b) the I ds Vs. V gs parameter has been plotted. From this we can understand that PAni (PolyAnniline) has least drain current value.
For 50 nm technology shown in figure (4.c) the I ds Vs. V gs parameter is taken and is represented as a graph, from which we can conclude that ZnO is ideal material to be used in this technology as it has least drain current parameter.  (4), (5), (6) we can observe that the FET designed using the Poly Aniline Nano-wire Material has less drain current , drain voltage , low threshold voltage, when compared with other polymeric compounds, while overall performance parameters are best for Zinc-Oxide (ZnO) material when compared with all the above mentioned materials.