ANALYSIS OF SERIES RESISTANCE AND INTERFACE STATE DENSITIES OF Ru/Ti/n-InP SCHOTTKY DIODE.
- Department of Electronics, S.V Degree & P.G College, Ananthapuramu 515 001, India.
- Department of Physics, JNT University (A), Ananthapuramu 515 002, India.
- Department of Physics, SSBN Degree and PG College, Ananthapuramu 515 001, India.
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The electrical properties of Ru/Ti/n-InP Schottky diode are investigated at room temperature using current-voltage (I-V) characteristics. The characteristic parameters of the Schottky barrier diode like barrier height, ideality factor and series resistance have been determined from the I-V measurements. The values of barrier height obtained from Norde\'s function were compared with those from Cheung functions, and observed that there was a good agreement between them. However, the values of series resistance obtained from Cheung functions and Norde\'s functions are not coincidence with each other. Because, Cheung functions are applicable in non-linear region of the forward bias I-V characteristics. Also, the energy distribution of interface state density was determined from the forward bias I-V characteristics by taking into account the bias dependence of the effective barrier height. The results reveals that the formation of thin interfacial layer between the metal and semiconductor.
[T Lakshmi Narasappa, S Farooq and Y Munikrishna Reddy (2016); ANALYSIS OF SERIES RESISTANCE AND INTERFACE STATE DENSITIES OF Ru/Ti/n-InP SCHOTTKY DIODE. Int. J. of Adv. Res. 4 (6). 747-752] (ISSN 2320-5407). www.journalijar.com
Article DOI: 10.21474/IJAR01/810 DOI URL: http://dx.doi.org/10.21474/IJAR01/810
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