Temperature Dependent Structural and Optical Properties of Doped Cadmium Sulphide Thin Films

Cadmium sulphide thin films were prepared using the SILAR (successive ionic layer and reaction) method. The films were then doped with zinc and annealed at different annealing temperatures. The as-deposited and annealed films were structurally characterised using X-ray Diffractometry (XRD) studies. The optical characterisation was done using the UV spectrophotometer to investigate the transmittance and reflectance versus wavelength measurements. The structural characterisation reveals that the films were polycrystalline, crystallising mostly with the cubic structure. From the optical characterisation, the energy bandgap for the as-grown layers was found to be in the range 2.30 eV to 3.80 eV which is within the range suitable for use as window layers in solar cell devices.