ANALYSIS OF SERIES RESISTANCE AND INTERFACE STATE DENSITIES OF Ru/Ti/n-InP SCHOTTKY DIODE.

The electrical properties of Ru/Ti/n-InP Schottky diode are investigated at room temperature using current-voltage (I-V) characteristics. The characteristic parameters of the Schottky barrier diode like barrier height, ideality factor and series resistance have been determined from the I-V measurements. The values of barrier height obtained from Norde's function were compared with those from Cheung functions, and observed that there was a good agreement between them. However, the values of series resistance obtained from Cheung functions and Norde's functions are not coincidence with each other. Because, Cheung functions are applicable in non-linear region of the forward bias I-V characteristics. Also, the energy distribution of interface state density was determined from the forward bias I-V characteristics by taking into account the bias dependence of the effective barrier height. The results reveals that the formation of thin interfacial layer between the metal and semiconductor.