15May 2017

SCALING CHALLENGES FOR ADVANCED TRANSISTOR DESIGN.

  • Department Of Ece., K L University, Greenfields, Vaddeswaram.
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We all are living in the digital world where we are going to use many devices which are fabricated using the CMOS technology. Due to the constraint design of the circuits and long routing schemes we are going to make the chip work a lot harder and it results in high power consumption. In order to reduce the power consumption we prefer to use certain techniques like usage of nano-materials instead of conventional Poly-Silicon. In this technique we are interested to modify certain conditions which results in generation of a new kind of technology which results in low power consumed, high speed circuits and devices which make a new way in the world of electronics. To reduce the power consumption of transistor i.e., when compared with ordinary transistor we has to reduce the power consumption as well as the power dissipation [6]. So we propose the application of nano-materials which have high conductivity as well as low ? power dissipation which can be employed in design of Transistors of various technologies ( like 200nm., 100nm., 50nm. etc.,).

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[M.Anil Kumar, Y.N.S.SaiKiran, U.Jagadeesh, B.Balaram andM. DurgaPrakash. (2017); SCALING CHALLENGES FOR ADVANCED TRANSISTOR DESIGN. Int. J. of Adv. Res. 5 (May). 340-345] (ISSN 2320-5407). www.journalijar.com

M.Durga Prakash
ASSOCIATE PROFESSOR, KL University

DOI:

Article DOI: 10.21474/IJAR01/4118      
DOI URL: https://dx.doi.org/10.21474/IJAR01/4118

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