Characterization of (Ni-Mn-Ca-Ag) oxide semiconductors prepared by solid state process

NiO -MnO2 semiconductors have been synthesized by a solid –state method. The prepared semiconductors have been characterized using X-Ray Diffraction, DTA, thermo gram and SEM. The (SEM) of the Mn- doped NiO samples have certain type of grain and also the voids take place between the grains. It is also found that the Mn, Ca, and Ag atoms are diffused into the NiO grains. In addition to NiMnO3 and Ni3Mn grains are observed. The thermo gram show two endothermic effect. Mixes representing NiO , CaO, MnO2 and Ag2O additives show very good plateau in (I-V) relation . The non-lineare behavior in NiO base materials is attributed to the formation of interface states in the band gap of NiO which lead to the development of potential barriers to electrical conduction at NiO grain boundaries. The decrease of capacitance in (pf) , dielectric constant (?-) and consequently increase (AC) conductivity with increasing frequency (1 – 20) KHz . A decrease in resistance and resistivity with rise in frequencies indicates a possibility of increase in the AC conductivity with increase frequency.