Vol. 7 (04) pp. 947-954 DOI: 10.21474/IJAR01/8912

DESIGNING AN IMPROVED RESISTIVE SENSOR INTERFACE WITH CNFET.

  • School of Electrical and Computer Engineering, Purdue University, West Lafayette, IN, USA.
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Abstract

Sensor interface has been widely used in applications areas such as pharmacy, food-processing, biotechnology, industries, and laboratories etc. The differential voltage current conveyor (DVCC) is a very versatile active building block and attained specialinterest for current-mode circuits. This paper attempts to explore an application of CNFET-based current conveyor (DVCC) for the design of a resistive sensor interface. The proposed interface circuit reduces 16.6% power than existing work. The design also minimizes the number of active and passive components in the circuit. Further, a DVCC based Instrumentation amplifier is presented which is also utilized for the simpler design of sensor interface. HSPICE simulations with 32 nm CNFET model are performed to test the design.

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References

  1. T. Abuelmaatti and N. Almutairi. New current-feedback operational amplifier based bandpass shadow filter. International Journal of Electrical Engineering Education, 54(1):95-101, 2017.
  2. Aouaj, A. Bouziane, and A. Nouacry. Nanotube carbon transistor (cntfet): I-V and C-V a qualitative comparison between fettoy simulator and compact model. In Multimedia Computing and Systems, 2009. ICMCS'09. International Conference on,
  3. pages 236-239. IEEE, 2009.
  4. Biolek, R. Senani, V. Biolkova, and Z. Kolka. Active elements for analog signal processing: classi_cation, review, and new proposals. Radioengineering, 17(4):15-32, 2008.
  5. Bogue. The fabrication and assembly of nanoelectronic devices. Assembly Automation, Emerald, 30(3):206-212, 2010.
  6. R. J. Cobley. Book review: Nanotechnology for telecommunications, 2011.
  7. A. De Marcellis and G. Ferri. Analog circuits and systems for voltage-mode and current-mode sensor interfacing applications. Springer, 2011.
  8. J. Deng and H.-S.Wong. A compact spice model for carbon-nanotube Field-effect transistors including nonidealities and its applicationpart ii: Full device model and circuit performance benchmarking. Electron Devices, IEEE Transactions on, 54(12):3195- 3205, 2007.
  9. M. Dresselhaus, G. Dresselhaus, J.-C. Charlier, and E. Hernandez. Electronic, thermal and mechanical properties of carbon nanotubes. Philosophical Transactions of the Royal Society of London. Series A: Mathematical, Physical and Engineering Sciences, 362(1823):2065-2098, 2004.
  10. G. Ferri, V. Stornelli, and M. Fragnoli. An integrated improved ccii topology for resistive sensor application. Analog Integrated Circuits and Signal Processing, 48(3):247- 250, 2006.
  11. A. D. Franklin, M. Luisier, S.-J. Han, G. Tulevski, C. M. Breslin, L. Gignac, M. S. Lundstrom, and W. Haensch. Sub-10 nm carbon nanotube transistor. Nano letters, 12(2):758-762, 2012.
  12. W. Haensch, E. J. Nowak, R. H. Dennard, P. M. Solomon, A. Bryant, O. H. Dokumaci, A. Kumar, X. Wang, J. B. Johnson, and M. V. Fischetti. Silicon cmos devices beyond scaling. IBM Journal of Research and Development, 50(4.5):339-361, 2006.
  13. T. M. Hassan and S. A. Mahmoud. New cmos dvcc realization and applications to instrumentation amplifier and active-rc filters. AEU-International Journal of Electronics and Communications, 64(1):47-55, 2010.
  14. A. Jorio, G. Dresselhaus, and M. S. Dresselhaus. Carbon nanotubes: advanced topics in the synthesis, structure, properties and applications, volume 111. Springer, 2007.
  15. Y.-B. Kim. Challenges for nanoscale mosfets and emerging nanoelectronics. transac-tions on electrical and electronic materials, 11(3):93-105, 2010.
  16. K. J. Kuhn. Considerations for ultimate cmos scaling. IEEE Trans. Electron Devices, 59(7):1813-1828, 2012.
  17. Y.-M. Lin, J. Appenzeller, Z. Chen, and P. Avouris. Electrical transport and 1/f noise in semiconducting carbon nanotubes. Physica E: Low-dimensional Systems and Nanostructures, 37(1):72-77, 2007.
  18. S. Masoumi, S. Masoumi, H. Hajghassem, H. Hajghassem, A. Erfanian, A. Erfanian, A. Molaei Rad, and A. Molaei Rad. Design and manufacture of tnt explosives detector sensors based on cntfet. Sensor Review, Emerald, 36(4):414-420, 2016.
  19. S. Minaei and E. Yuce. All-grounded passive elements voltage-mode dvcc-based universal filters. Circuits, Systems and Signal Processing, 29(2):295-309, 2010.
  20. A. Musatov, Y. V. Gulyaev, K. Izraelyants, E. Kukovitskii, N. Kiselev, O. Y. Maslennikov, I. Guzilov, O. Zhigalina, A. Ormont, and E. Chirkova. Low-voltage planar field emitters based on carbon nanotubes. Journal of Communications Technology and Electronics, 51(8):960-964, 2006.
  21. S. Nihtianov and A. Luque. Smart sensors and mems: intelligent devices and microsystems for industrial applications. Woodhead Publishing, 2014.
  22. N. Patil, A. Lin, E. R. Myers, K. Ryu, A. Badmaev, C. Zhou, H.-S. Wong, and S. Mitra. Wafer-scale growth and transfer of aligned single-walled carbon nanotubes. Nanotechnology, IEEE Transactions on, 8(4):498-504, 2009.
  23. M. Przybylski. Data acquisition for sensor systems. International Journal of Electrical Engineering Education, 35(1):95, 1998.
  24. Raychowdhury, S. Mukhopadhyay, and K. Roy. A circuit-compatible model of ballistic carbon nanotube field-effect transistors. Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on, 23(10):1411-1420, 2004.
  25. A. Raychowdhury and K. Roy. Carbon nanotube electronics: design of high-performance and low-power digital circuits. IEEE Transactions on Circuits and Systems I: Regular Papers, 54(11):2391-2401, 2007.
  26. S. K. Tripathi and M. S. Ansari. Voltage-mode universal filter for Zigbee using ?0.9V 32nm CNFET ICC-II. 5th International Conference- (Conuence-2014), pp. 471-475 IEEE, 2014.
  27. S. K. Tripathi, M. S. Ansari, and A. M. Joshi. Low-noise tunable band-pass filter for ism 2.4 ghz bluetooth transceiver in ?0.7 V 32 nm cnfet technology. In Proceedings of the International Conference on Data Engineering and Communication Technology, pages 435-443. Springer, 2017.
  28. S. Wind, J. Appenzeller, R. Martel, V. Derycke, and P. Avouris. Fabrication and electrical characterization of top gate single-wall carbon nanotube field-effect transistors. Journal of Vacuum Science & Technology B, 20(6):2798-2801, 2002.

How to Cite This Article

Farrukh Arslan. (2019); DESIGNING AN IMPROVED RESISTIVE SENSOR INTERFACE WITH CNFET., Int. J. of Adv. Res., 7 (04), 947-954, ISSN 2320-5407. DOI: https://doi.org/10.21474/IJAR01/8912

Corresponding Author

Farrukh Arslan
Purdue University, USA