AC BACK SURFACE RECOMBINATION IN N+-P-P+ SILICON SOLAR CELL: EFFECT OF TEMPERATURE

Excess minority carriers diffusion equation in the base of monofaciale silicon solar cell under frequency modulation of polychromatic illumination is resolved. Using conditions at the base limits involving recombination velocities Sf and Sb, respectively at the junction (n+/p) and back surface (p+/p), the expression of the excess minority carriers density d (T, w) is determined. The density of photocurrent Jph (T, w) is represented according to the recombination velocity at the junction for different temperature values. The expression of the ac back surface recombination velocity Sb of minority carriers is then deduced depending on frequency of modulation, temperature, electronic parameters (D) and the thickness of the base. Bode and Nyquist diagrams are used to analyze, both diffusion coefficient and back surface recombination of excess minority carriers submitted to Umklap process.