MAGNETOTRANSPORT IMPACTON SHUNT RESISTANCEIN BIFACIAL c-Si CELLS: A NEAR-SHORT-CIRCUIT ANALYSIS
- Department of Physics and Chemistry, University Iba Der Thiam of Thies, Thies, Senegal.
- Applied Research Unit for Renewable Energies, University of Nouakchott, Nouakchott, Mauritania.
Abstract
We analyze the influence of a weak magnetic field (B = 10-4 to 10-3 T) on the shunt resistance Rsh of bifacial polycrystalline-silicon solar cells, focusing on the near short-circuit region where the initial slope of the J-V curves sensitively reveals leakage. The device is modeled using a three-dimensional, grain-column approach. The transport equations are solved with diffusivity and diffusion length allowed to depend on B, while base thickness H (100-400 um) and illumination mode (front, rear, dual) are swept systematically. Joint parameter extraction {J0, n, Rs, Rsh} is performed from the J-V characteristics and interpreted using standard experimental indicators (stability of the photocurrent plateau, low-voltage slope, evolution of the open-circuit voltage). Three key findings emerge. (i) Rsh increases with the carrier-collection velocity and, in general, with B, but the magnitude of this change depends strongly on illumination geometry
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How to Cite This Article
Moussa Toure, Mamadou Lamine Samb, Youssou Gning, Aly Toure, Alioune Ngom and Ahmed Mohamed-Yahya (2025); MAGNETOTRANSPORT IMPACTON SHUNT RESISTANCEIN BIFACIAL c-Si CELLS: A NEAR-SHORT-CIRCUIT ANALYSIS, Int. J. of Adv. Res., 13 (09), 439-453, ISSN 2320-5407. DOI: https://doi.org/10.21474/IJAR01/21726
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