Vol. 14 (03) pp. 153-168 DOI: 10.21474/IJAR01/22924

OPTIMIZATION OF ELECTRON AFFINITY IN IN2S3 BUFFER LAYERS FOR CIGS SOLAR CELLS: A SILVACO ATLAS SIMULATION STUDY

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  • Department of Physics and Chemistry, University Iba Der Thiam of Thies, Thies, Senegal.
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Abstract

This study aims to optimize the electron affinity of the indium sulfide (In2S3) buffer layer in CIGS solar cells in order to provide a non-toxic alternative to conventional CdS. In2 S3 exhibits several attractive properties, including a wide optical bandgap (2-2.9 eV), high optical transparency, and a tunable electron affinity that enables control of band alignment at the heterojunction interface.A numerical investigation was carried out using the SILVACO ATLAS device simulator to analyze the influence of the buffer-layer electron affinity (x = 4.0-4.8 eV) on the main photovoltaic parameters (J_SC,V_OC,FF, and n), as well as on the parasitic resistances (R_s and R_sh).

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How to Cite This Article

Moussa Toure et, al (2026); OPTIMIZATION OF ELECTRON AFFINITY IN IN2S3 BUFFER LAYERS FOR CIGS SOLAR CELLS: A SILVACO ATLAS SIMULATION STUDY, Int. J. of Adv. Res., 14 (03), 153-168, ISSN 2320-5407. DOI: https://doi.org/10.21474/IJAR01/22924

Corresponding Author

Mamadou Lamine SAMB
Department of Physics and Chemistry, University Iba Der Thiam of Thies, Thies, Senegal.
Senegal
Creative Commons Attribution 4.0 This work is licensed under a Creative Commons Attribution 4.0 International License.