Resistive switching in the Al/Si/SiO2/CdS/Polymer/Al structure fabricated at room temperature

Resistance random access memory (RRAM), which uses a resistive switching phenomenon found in transition metal oxides. A RRAM memory cell is a capacitor-like structure composed of insulating or semiconducting transition metal oxides that exhibits reversible resistive switching on applying voltage pulses. CdS and Polymer (Cellulose Acetate) – based RRAM possessing stable resistive switching is investigated in this work. A new structure of a memory was investigated. It is constructed with silicon as a substrate and silicon oxide thermally grown on it and active materials that consist of CdS layer as a semiconductor n-type and Polymer (Cellulose Acetate) layer sandwiched between the two electrode using same metal. The Polymer layer are coating by using Spin-Coater Instrument. The present structure is behaving as unipolar resistive switching because this structure can be switched between high - resistance state (HRS) and low - resistance state(LRS). The top electrode area will affect on the resistive behavior also. This effect is occurred more in large top electrode area (TEL=15.896mm2) where , the forming voltage (Vforming) are inversely proportional with respect to the top electrode area (A).also, the (HRS) inversely proportional with the (A).Finally, the resistance ratio (Rratio) are directly proportional with the(A).The compliance current (Icc=25mA) are used for protecting the device from the damage. The fabricated structure has many prosperities , such as Vforming = 6.2voltt at I=7.7mA ,Vset = 2.85volt, VReset = 1.4volt and Rratio=16.28.