INFLUENCE OF TEMPERATURE, IRRADIATION, AND FREQUENCY MODULATION ON THE MINORITY CARRIER DIFFUSION COEFFICIENT IN A BIFACIAL SILICON SOLAR CELL

This work presents a study of the influence of temperature, irradiation, and frequency modulation on the minority carrier diffusion coefficient in the p-type base region of a bifacial silicon solar cell illuminated only on the front face. The minority carrier diffusion coefficient is one of the key parameters governing the performance of silicon photovoltaic cells, as it directly affects the collection of photogenerated carriers, recombination losses, and the overall conversion efficiency. The study is based on an analytical approach derived from semiconductor transport theory, taking into account the combined effects of temperature, irradiation energy, and frequency modulation on carrier transport within the p-type base region.This method makes it possible to evaluate the evolution of the diffusion coefficient under various physical and environmental conditions.The numerical results show that the minority carrier diffusion coefficient strongly depends on temperature, irradiation level, and frequency modulation, through their influence on minority carrier mobility, defect density, and recombination mechanisms. In particular, the diffusion coefficient decreased significantly as temperature, irradiation energy, and modulation frequency increase. This behavior is mainly attributed to the increase in recombination centers, the creation of irradiation-induced crystalline defects, and the reduction of minority carrier mobility within the semiconductor material.