STUDY OF THE INFLUENCE OF OPTIMAL BASE THICKNESS ON THE I-V CHARACTERISTICS OF A BIFACIAL SILICON SOLAR CELL UNDER MONOCHROMATIC REAR-SIDE ILLUMINATION IN STEADY-STATE CONDITIONS FOR SHORT WAVELENGTHS

In this work, we investigate the influence of the optimum base thickness on the current-voltage (I-V) characteristics of a bifacial silicon solar cell subjected to monochromatic illumination at low wavelengths under steady-state conditions. The study is based on the analysis of photovoltage and photocurrent density as functions of the junction recombination velocity, the incident wavelength, and the corresponding optimum base thickness. The obtained profiles show that the photovoltage remains maximum and constant at low recombination velocities, corresponding to the open circuit condition, and then decreases as the recombination velocity increases. The results also reveal that the open-circuit voltage increases with wavelength while it decreases as the optimum thickness increases. Furthermore, the short circuit photocurrent density increases with wavelength and decreases with the optimum base thickness. The obtained I-V characteristics highlight the signify cantinfluence of optical and geometrical parameters on the electrical performance of the solar cell. This study therefore contributes to the optimization of bifacial silicon photovoltaic cells intended for high-efficiency photovoltaic applications.