ON THE EFFECT OF ELECTRIC FIELD ON PHOTOCONDUCTIVITY IN n-InSe SINGLE CRYSTALS
- Baku State University, Baku, Azerbaijan Republic ?z1145, Baku city, Z. Khalilov street, 23.
- Azerbaijan State Economic University Baku, Azerbaijan Republic ?z1145, Baku city, Z. Khalilov street, 23.
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In a wide interval of change of the temperature (77÷400 K) and intensity (from extremely weak up to 2.5•103 V?cm) effect of galvanically applied external electric field on spectral distribution and lux-ampere characteristic of photoconductivity of n-InSe crystals with various (from ~ 102 to ~108 Ohm•?m) initial (at 77 ?) specific resistance (??0). It is established that contrary to low-resistance (??0 ?103 ?hm•?m) crystals, in high-resistance ones (??0 > 104 ?hm•?m) of this semiconductor in low temperature region (? ? 250 ?) at strong electric fields key parameters and characteristics of the intrinsic photoconductivity changes with voltage. It is supposed that found out at that dependence of parameters and characteristics of the intrinsic photoconductivity on external electric field is connected with spatial heterogeneity of the studied crystals and an electric ("injection") flattening of fluctuation of the potential relief of free energy zones in them.
[A.Sh. Abdinov, R.F. Babayeva, R.M. Rzayev, S.I.Amirova (2015); ON THE EFFECT OF ELECTRIC FIELD ON PHOTOCONDUCTIVITY IN n-InSe SINGLE CRYSTALS Int. J. of Adv. Res. 3 (Oct). 593-598] (ISSN 2320-5407). www.journalijar.com
