Growth Rate of Helicon Wave in Ferroelectric Semiconducting Plasmas

A detailed analytical investigation is made of the growth rate of helicon wave in ferroelectric semiconducting plasma in ferroelectric material with strain dependent dielectric constant. A geometrical configuration is made of decay of a high power helicon wave and an acoustic wave in magnetized ferroelectric semiconducting material. The Growth rate of Helicon waves in ferroelectric semiconducting plasma obtain by using a hydrodynamic model of semiconducting plasmas and coupled mode theory of waves. It is found that the Growth rate of helicon waves in ferroelectric semiconductor crystal is appreciably high. The dispersion relation is obtained by using hydrodynamic model of homogeneous, ferroelectric one-component electron semiconducting plasma and the threshold value of pump electric field and the growth rate of unstable mode is calculated. The growth rate analysis have been applied to BaTiO3 semiconducting crystal at 77K dully irradiated by a high power helicon wave for numerical estimation. The laser wave intensities are used in the range of? 10?^12 to ?10?^14 ?Wm?^(-2) is assumed that the damage threshold is less in BaTiO3 crystal. The Growth rate is found to be of the order of? 10?^14 s^(-1).