Vol. 3 (12) pp. 1306-1309

Size dependent Young’s modulus of semiconductor nanowires: A theoretical approach

  • Department of Physics and Electronics, St. Xavier’s College Ahmedabad, 380009, India.
  • Department of Physics and Electronics, St. Xavier’s College Ahmedabad, 380009, India.
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Abstract

The present paper reports the Young’s modulus of semiconductor (viz. ZnO and TiO2) nanowires as a function of diameters considering both equilibrium strain and surface stress effect. A good agreement between the present calculated and available theoretical size dependent Young's modulus is found. The variation of relaxed/unrelaxed bulk materials surface and its effect on the Young’s modulus of the semiconductor nanowire is also demonstrated. A tensile (positive) surface stress can lead to an increase in the Young’s modulus and the decrease can be a result of a compressive (negative) surface stress. The surface stress plays an important role in determining the mechanical properties of the semiconductor nanowires.

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How to Cite This Article

Andrews McEwan and Sanjeev K. Gupta (2015); Size dependent Young’s modulus of semiconductor nanowires: A theoretical approach, Int. J. of Adv. Res., 3 (12), 1306-1309, ISSN 2320-5407.

Corresponding Author

Andrews McEwan