Design and analysis of RF power amplifier using thin film passive components at 3.5GHZ.

RF power amplifier plays a major role in deciding the overall interpretation, cost, and reliability of the wireless system, Reliability and electrical performance is improved through the use of fewer components and use of more electrically consistent parts with lower-loss factors respectively. To reduce chip size, miniaturization and incorporation of passive components plays a significant role. This can be achieved by placing capacitors and resistors based on thin film technology. The main purpose of this project is to achieve both high gain, high output power and to reduce the chip size using thin film passive components. The design is implemented using 0.30µm GaAs technology, which consumes low power (around 1 Watt). The power amplifier is designed and simulated for 3.5GHz frequency usually adopted in WIMAX applications. The Design is simulated and verified using Agilent’s Advanced Design System software (ADS) 2013. This circuit achieves gain of 13.359dB and output power of 10.186dBm.