MINORITY CARRIERS MOBILITY DETERMINATION IN THE BASE REGION OF N+-P-P+ SILICON SOLAR CELL UNDER EFFECTS OF IRRADIATION FLUX, TEMPERATURE AND MAGNETIC FIELD
- Laboratory of Semiconductors and Solar Energy, Physics Department, Faculty of Science and Technology, University Cheikh Anta Diop, Dakar, Senegal.
- Ufrset, University of Thies, Senegal.
- Faculty of Science and Technology /Universityof Nouakchott Al Aasriya.
Abstract
The aim of this study is to show the influence of temperature on the relative value of the short-circuit photocurrent density obtained from an n+-p-p+silicon solar cell front illuminated with modulated polychromatic light. The solar cell was already subjected to charged particules irradiation flux (Φp) and intensity (kl,) and remained under both magnetic field (B) and temperature (T). Thus, the graphical representation of the relative value of the short-circuit photocurrent density as a function of the square of the magnetic field (B) yields to determine the slope, which is related to the mobility of minority carriers in the base. It is obtained for a back surface field silicon solar cellunder both temperature and irradiation flux of charged particules.
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How to Cite This Article
Sada Traore, Idrissa Gaye, Oulimata Mballo, Ibrahima Diatta, Richard Mane, Mor Ndiaye, Mohamed Abderahim El Moujtaba and Gregoire Sissoko (2021); MINORITY CARRIERS MOBILITY DETERMINATION IN THE BASE REGION OF N+-P-P+ SILICON SOLAR CELL UNDER EFFECTS OF IRRADIATION FLUX, TEMPERATURE AND MAGNETIC FIELD, International Journal of Advanced Research (IJAR), 9 (08), 694-703, ISSN 2320-5407. DOI: https://doi.org/10.21474/IJAR01/13317
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