USING PERCOLATIVE CRYSTALLINE 0.3 CUO/PVDF NANOCOMPOSITE GATE DIELECTRIC FOR FABRICATING HIGH-EFFECT MOBILITY THIN FILM TRANSISTOR OPERATING AT LOW VOLTAGE

Thin-film transistor (TFT) with various layers of crystalline Poly-vinylidene fluoride (PVDF)/CuO percolative nanocomposites based on Anthracene as a gate dielectric insulator have been fabricated. A device with excellent electrical characteristics at low operating voltages (<1V) has been designed. Different layers (L) of the film were also prepared to achieve the best optimization of ideal gate insulator with various static dielectric constants (ε_r). Capacitance density, leakage current at 1V gate voltage and electrical characteristics of OFETs with a single and multi layer films have been investigated. This device was showed highest field effect mobility of 2.27 cm²/Vs, a threshold voltage of -1.6V, an exceptionally low sub threshold slope of 380 mV/decade and an on/off ratio of 10⁶. Such a High-ε three layered (3L) PVDF/CuO gate dielectric appears to be highly promising candidates for organic non-volatile memory, sensor and field-effect transistors (FETs).