MINORITY CARRIERS DENSITY AND RECOMBINATION VELOCITY AT THE BACK FACE OF N+PP+ SILICON SOLAR CELL: EFFECTS OF DOPING RATE AND TEMPERATURE
- Laboratory of Semiconductors and Solar Energy, Physics Department, Faculty of Science and Technology, University Cheikh Anta Diop of Dakar , Dakar - Senegal.
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In this article, we have established the expressions of the density of minority charge carriersand the recombination velocity at the back face of our sample.The effects of the base doping rate combined with the effects of temperature on the latter have been the subject of our study.Thus, we followed the evolution of the density of minority charge carriers and of the recombination velocity at the back face as a function of the thickness of the base for different base doping rate and for different values of the temperature.
[Fatimata B.A, Omar Diallo Sadio, Dame Diao, Mor Ndiaye and Issa Diagne (2023); MINORITY CARRIERS DENSITY AND RECOMBINATION VELOCITY AT THE BACK FACE OF N+PP+ SILICON SOLAR CELL: EFFECTS OF DOPING RATE AND TEMPERATURE Int. J. of Adv. Res. 11 (Feb). 175-184] (ISSN 2320-5407). www.journalijar.com
Article DOI: 10.21474/IJAR01/16237
DOI URL: http://dx.doi.org/10.21474/IJAR01/16237
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