STUDY AND EVALUATE THE CHARACTERISTICS OF GALLIUM NITRIDE: THE NEXT GENERATION SEMICONDUCTOR

In contemporary society, semiconductors have emerged as an essential component in the daily lives of individuals, given their integral association with fundamental necessities such as internet connectivity,electrical power provision,and computational capabilities. The predominant semiconductor material in use at present is silicon. Its economic advantages during the initial phases of development resulted in a significant lag for alternative semiconductor materials. However, as semiconductor fabrication has advanced to nanoscale dimensions and even 3-nanometer technology, the limitations intrinsic to silicon semiconductors have become increasingly pronounced. As silicon transistor dimensions continue to diminish, quantum tunneling phenomena, including leakage current and gate leakage current, have led to a persistent escalation in power consumption. In addition, the silicon fabrication process necessitates stringent conditions, such as high vacuum, elevated temperatures, and multiple procedural steps, thereby exacerbating production costs and process complexities. Consequently, researchers have directed their aspirations towards the next-generation semiconductor material, gallium nitride (GaN), as a viable substitute for silicon.Due to its superior characteristics, including a wider bandgap, enhanced electron mobility, and improved thermal conductivity, gallium nitride (GaN) presents promising avenues for addressing the limitations associated with silicon-based semiconductors. Keywords: Semiconductor, transistor, gallium nitride.