SRIM-BASED INVESTIGATION OF HEAVY-IONS 238U, 132XE, 84KR, 56FE AND 40AR ENERGY LOSS AND PENETRATION IN SILICON DEVICES

This article investigates the impact of heavy ions (238U 238U 132Xe, 84Kr, 58Fe,40Ar) on silicon devices, which are essential in electronic and photovoltaic technologies. These devices, vulnerable to ionizing radiation particularly in space or nuclear environments experience alterations in their electrical and optical properties due to interactions between the ions and the crystal lattice. Using the SRIM (Stopping and Range of Ions in Matter) software, the study simulates the energy loss of these ions to distinguish the contributions of electronic losses, dominant at high energy, and nuclear losses, responsible for crystal defects at low energy.It also determines the penetration depth, an important parameter for optimizing the thickness of silicon devices.