Optical X- Radiation Sensor, and electrical properties of flash evaporated AgInTe2 thin Films

Thin films of AgInTe2 compound with various thicknesses have been deposited onto both glass and quartz substrates using flash evaporation technique at room temperature. The spectral distribution of both the refractive index (n) and the absorption index (k) and hence the absorption coefficient (?) were studied over a range of wavelength from 200 to 2500 nm .The effect of X-radiation (with different doses ranged from 0 to 12.5 KGy on the optical properties was investigated for dosimetry applications. It was found that both n and k increased as the dose increased and the position of nmax was shifted to lower wavelength ?c. The optical data were analyzed to obtain dielectric constants (?? and ?L), where they increased as the value of the dose increased. On the other hand, the absorption edges have been shifted to higher wavelength which was associated with three allowed direct transition as the dose of X-ray radiation increased from 2.5 to 12.5 KGy. Also, the dark electrical resistivity measurements were carried out through a temperature range (298- 423K).An estimation of mean free path (L0) of charge carriers in AgInTe2 thin films and bulk resistivity, ?B was attempted. Measurements of thermoelectric power confirmed that AgInTe2 thin films behave as p-type semiconductors. Finally, the ac conductivity (?ac) has been investigated in the frequency range (102- 106 MHz) and temperature range (298 – 407 K). ?ac was found to be proportional to ?s , where s increased as the temperature increased. Finally; The ac conductivity interpreted by the NSPT model.