COMPARATIVE STUDY OF SHEET RESISTANCE BETWEEN SILICON DOPED N AND SILICON P IN DARK AND NO APPLY VOLTAGE
- Research, Department of Physics, Cheikh Anta Diop University, Dakar Senegal.
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The aim of the study is to compare the sheet resistance between silicon doped n and silicon doped p at dark and no apply voltage.The sheet resistance Ïsq at equilibrium is determined from the net ionised doping concentration and the mobility of the majority carriers.The calculator then determines the sheet resistance and the junction depth of the surface diffusion at outdoor temperature..The sheet resistance of silicon with background doped boron has great sheet resistance compared to silicon with background doped phosphorus.
[Alassane Diaw, Papa Touty Traore, Mor Ndiaye and Issa Diagne (2023); COMPARATIVE STUDY OF SHEET RESISTANCE BETWEEN SILICON DOPED N AND SILICON P IN DARK AND NO APPLY VOLTAGE Int. J. of Adv. Res. 11 (Apr). 852-855] (ISSN 2320-5407). www.journalijar.com
Article DOI: 10.21474/IJAR01/16734
DOI URL: http://dx.doi.org/10.21474/IJAR01/16734
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