DESIGN AND ANALYSIS OF CONTENT ADDRESABLE MEMORY USING GNRFET FOR NEXT GENERATION AMPLIFIERS

The ongoing limitations in scaling CMOS technology has forced efforts toward alternative nano electronic devices with a higher speed and lower power. We report on the design and analysis of a Content Addressable Memory (CAM) employing Graphene Nanoribbon Field Effect Transistors (GNRFETs) for next generation amplifier applications. Due to GNRFETs possessing high carrier mobility combined with a tunable bandgap and superior electrostatic control compared to traditional MOSFETs, they have a more advantageous switching speed while minimizing leakage and improving scalability. The designed CAM architecture based on GNRFETs has been modelled and simulated to observe the delay, power dissipation, and search speed. Based on the simulation results, our GNRFET CAM demonstrated a greater degree of energy efficiency and operating frequency ultimately demonstrating the capability of GNRFETs to improve performance limitations in traditional CAM circuits. GNRFET based memory architecture has potential as an ultra-low-power, high-speed computing and amplifier subsystems in future nanoelectronics and mixed-signal integrated circuits.