PERFORMANCE EVALUATION OF A NANOSHEET FIELD EFFECT TRANSISTOR AND SIMULATING ITS DC CHARACTERISTICS

This research presents a comprehensive modeling and performance evaluation of a 20 nm gate length (Lg) silicon-based NSFET uses three-dimensional (3D) technology computer aided design (TCAD) simulations. The study systematically investigates the influence of key geometrical parameters, such as nanosheet width (Wns) and thickness (Tns), on critical direct current (DC) performance metrics, including: Ion ,Ioff, SS, DIBL. The simulation results demonstrate that the 20 nm NSFET exhibits excellent performance DC characteristics, and a steep subthreshold swing, making it highly suitable for low-power and high-speed switching applications.