ANALYTICAL OPTIMIZATION OF THE BASE THICKNESS OF A FRONT-ILLUMINATED (N/P/P) BIFACIAL SILICON SOLAR CELL UNDER COMBINED EFFECTS OF TEMPERATURE, FREQUENCY MODULATION, IRRADIATION AND DAMAGE COEFFICIENT

Optimizing the base thickness is a key challenge for improving the performance of bifacial silicon solar cells, particularly when they are designed to operate under combined thermal, radiation, and dynamic conditions. In this work, an original analytical approach based on the derivative of the back surface recombination velocity of minority carriers is proposed to determine the optimum base thickness of a front-illuminated bifacial silicon solar cell with an (n+/p/p+) structure under polychromatic light modulated in frequency. The developed model simultaneously accounts for the effects of temperature, modulation frequency, irradiation energy, and the damage coefficient on minority carrier transport. This approach establishes a relationship between the diffusion, generation, and recombination mechanisms and the evolution of the optimum base thickness under realistic operating conditions.