OPTIMIZATION OF SILICON SOLAR CELL BASE THICKNESS, WHILE ILLUMINATED BY A LONG WAVELENGTHMONOCHROMATIC LIGTH: INFLUENCE OF BOTH LORENTZ LAW AND UMKLAPP PROCESS
- Institut Universitaire de Technologie. Universite Iba Der THIAM de Thies-Senegal.
- Groupe International de Recherche en Energie Renouvelable(GIRER). BP. 15003, Dakar, Senegal.
- Ecole Superieure Multinationale de Telecommunication, Dakar, Senegal.
- Ecole Polytechnique de Thies, BP A10, Thies, Senegal.
Abstract
The optimum thickness of a silicon solar cell base is determined using phenomelogic parameters, which are the minority carriers diffusion coefficient and the recombination velocity at the back side, influenced by Lorentzs law and the Umklapp process.The results obtained are consistent with the generation of minority charge carriers deep in the base by a monochromatic light of long wavelength.
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Sega Diagne, Ousmane Sow, Gora Diop, Richard Mane, Ibrahima Diatta, Djiby Ndiongue, Youssou Traore, Lemrabott Habiboullah, Mamadou Wade and Gregoire Sissoko (2022); OPTIMIZATION OF SILICON SOLAR CELL BASE THICKNESS, WHILE ILLUMINATED BY A LONG WAVELENGTHMONOCHROMATIC LIGTH: INFLUENCE OF BOTH LORENTZ LAW AND UMKLAPP PROCESS, International Journal of Advanced Research (IJAR), 10 (08), 133-143, ISSN 2320-5407. DOI: https://doi.org/10.21474/IJAR01/15158
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