BIFACIAL (N+/P/P+) SILICON SOLAR CELL BASE THICKNESS OPTIMIZATION, WHILE ILLUMINATED BY THE REAR FACE WITH MONOCHROMATIC LIGHT OF SHORTWAVELENGTHS
- Ecole Polytechnique de Thies, BP A10, Thies, Senegal.
- Institut Universitaire de Technologie. Universite Iba Der THIAM de Thies-Senegal.
- Groupe International de Recherche en Energie Renouvelable(GIRER). BP. 15003, Dakar, Senegal.
- Universite Assane SECK, Ziguinchor, Senegal.
Abstract
The monochromatic absorption coefficient of silicon, inducing the depth of penetration of light into the base of the solar cell, is used through back surface recombination velocity expressions, to determine the optimum thickness necessary for the production of a large photocurrent. The absorption-generation-diffusion and recombination (bulk and surface) phenomena are taken into account in determining the optimum thickness of an n+ -p-p+ bifacial solar cell, for it manufacture process optimization.
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Gilbert Ndiasse Dione, Hamet Yoro B.A, Gora Diop, Malick Ndiaye, Ibrahima Diatta, Khady Loum, Youssou Traore, Moustapha Thiame, Ousmane Sow, Mamadou Wade and Gregoire Sissoko (2022); BIFACIAL (N+/P/P+) SILICON SOLAR CELL BASE THICKNESS OPTIMIZATION, WHILE ILLUMINATED BY THE REAR FACE WITH MONOCHROMATIC LIGHT OF SHORTWAVELENGTHS, International Journal of Advanced Research (IJAR), 10 (09), 409-418, ISSN 2320-5407. DOI: https://doi.org/10.21474/IJAR01/15372
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